Huawei: Applying for a patent for Micro LED display panels, which can increase the light-emitting area and improve light efficiency
According to the announcement from the State Intellectual Property Office, Huawei Technologies Co., Ltd. has applied for a patent called "A Micro LED display panel, display equipment and manufacturing method", Publication No.: CN117690946A, and the application date is September 2022. This solution can increase the area of the luminous area and improve the light efficiency. There is no need for huge transfers and the pass rate is improved. Prevent optical crosstalk and facilitate uniform current distribution.
Image source: State Intellectual Property Office
The specific patent abstract is as follows: This application discloses a Micro LED display panels, display devices and manufacturing methods include multiple display structures. Each display structure includes: a first electrode, a second electrode, a first semiconductor layer, a second semiconductor layer and a light-emitting layer; the first electrodes, first semiconductor layers and light-emitting layers of adjacent display structures are independent of each other; the first semiconductor layer and the second semiconductor layer are respectively located on the light-emitting layer. On both sides of the surface of the layer; the first electrode is located on the side of the first semiconductor layer facing away from the light-emitting layer, and the second electrode is located on the side of the second semiconductor layer facing away from the light-emitting layer; the light-emitting layer of each display structure corresponds to a pixel area; the second electrode is routed around each pixel area, and the second electrode is the common electrode of each pixel area and is a metal barrier between adjacent pixel areas.
Changhong Electronics: Announced two Micro LED invention patents
On March 12, Changhong Electronics and Qirike Technology announced the invention patent for "Micro LED surface structure and preparation method", application publication number: CN117693216A.
Image source: State Intellectual Property Office
In order to improve the light extraction efficiency and collimation effect of quantum dots, this patent provides a Micro LED surface structure and preparation method. The surface of the LED chip is constructed with a metal nanoring structure. When the structural parameters of the nanoring match the wavelength of the central quantum dot light, a strong collimation effect will be produced, which can realize the directional collimation function of the emitted light. The bottom metal reflector collects the light emitted downward by the quantum dot light source and reflects it to the chip's luminous direction, increasing the number of photons in the luminous direction, thus greatly increasing the light extraction efficiency of the quantum dot Micro LED chip in the vertical direction.
In addition, on March 15, Changhong Electronics and Qirike Technology jointly disclosed an invention patent called "A Micro LED-based screen fingerprint identification device and method", application publication number: CN117711037A.
Image source: State Intellectual Property Office
In order to solve the problem that the current Micro LED screen fingerprint recognition requires the installation of additional sensors, resulting in additional light port ratios, as well as the problem that the user needs to touch a designated area to unlock, which is not easy to operate;
This patented invention provides a method based on Micro LED Fingerprint recognition device of LED screen. When the fingerprint recognition function is required, the touch sensing module confirms the pressing position of the finger. The first LED chip under the finger is used as the light source for fingerprint recognition. The pixel drive circuit connected to the second LED chip measures the voltage difference of the photocurrent generated by the light emitted by the first LED chip through the raised and recessed parts of the fingerprint on the second LED chip to determine the shape of the fingerprint. The fingerprint recognition function is completed and the Micro LED screen returns to normal display status.
Konka: Micro LED protective films, structures, display devices and electronic equipment
On March 12, Shenzhen Konka Electronic Technology Co., Ltd.’s invention patent for “Micro LED protective film, Micro LED structure, display device and electronic equipment” entered the authorization stage.
This patented invention uses the light-absorbing material at the edge of the semi-permeable membrane to absorb light at large angles, effectively improving the problem of bright lines in splicing seams.
Image source: State Intellectual Property Office
The specific patent abstract is as follows: The present invention discloses a Micro LED protective film, Micro LED structure, display device and electronic equipment. The Micro LED protective film includes a light-absorbing material and a single-layer semi-permeable film or a composite layer semi-permeable film. The edge of the single-layer semi-permeable film is surrounded by light-absorbing material. The composite layer semi-permeable film includes multiple layers of semi-permeable films with the same or different refractive index stacked sequentially from the inside to the outside. The edges of the composite layer semi-permeable film are surrounded by light-absorbing materials.
Zhaochi Semiconductor: A Micro LED mass transfer method
On March 15, Zhaochi Semiconductor’s invention patent "A Micro LED mass transfer method" was announced, with application publication number CN117712241A. This technology does not require high-precision design, can perform adhesion transfer according to different chip heights, can increase the transfer rate, and ensure a high transfer yield.
Image source: State Intellectual Property Office
The specific patent summary content is as follows: The present invention provides a Micro The LED mass transfer method includes the following steps: providing a substrate, and preparing chips on the substrate; providing a substrate, and setting a bonding film on one side of the substrate; temporarily bonding the substrate and the substrate; peeling off the substrate; setting a column on the side of the chip away from the substrate; providing a transfer head, and attaching the third adhesive part of the transfer head to the column to simultaneously transfer multiple first chips or second chips or third chips from the substrate to the circuit board based on the height difference of each column. By using light-curing resin, chip bases of different heights are selectively cured, and the viscosity between the chip and the substrate is reduced based on the light of UV debonding glue. Finally, the chips are transferred in batches based on a high-viscosity transfer head.
Xiamen University: Improving Micro LED light extraction efficiency
On March 15, Xiamen University announced an invention patent titled "A Micro LED device structure and manufacturing method that improves light extraction efficiency." Application publication number: CN117712263A. This invention improves the distribution of current in the device, reduces the current density, and slows down the current crowding effect by reducing the difference in current density and increasing the mobility of electrons in the material. This greatly improves device performance.
Image source: State Intellectual Property Office
Specifically, the invention discloses a Micro LED device structure and manufacturing method. The epitaxial layer of the structure includes n-GaN layer, MQW and p-GaN layer in order from the back to the front, and a light-emitting mesa is formed by etching from the front to the n-GaN layer. The first current expansion layer is provided on the p-GaN layer of the light-emitting mesa. The p electrode and the n electrode are respectively provided on the first electrode. On the flow expansion layer and n-GaN layer, the passivation layer, reflective layer and insulating layer cover the front side of the device structure in order. The p electrode and n electrode are respectively led out through the bonding metal that penetrates the passivation layer, reflective layer and insulating layer; the n-GaN layer is etched to form several through holes in the light-emitting mesa area, and the second current expansion layer is filled in the through holes.
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