Rom: the first step in the development of silicon carbide products

By virtue of being called "the innovative concept of extraordinary thinking", Japan ROHM (Roma) in the field of the components of the reform will bring a new surprise to the industry. In Japan's CEATEC exhibition Roma's booth, Roma display IC, discrete semiconductors, optical semiconductors, electronic components, modules and other broad product line reflects a lot of innovation.

Silicon carbide products to achieve performance improvement

In RAM products on display in the most eye-catching is the low power Schottky barrier diode (SBD) "SCS110A" series, MOSFET and IPM (intelligent power module). They use SiC (SIC) material, SiC because of low power consumption, high voltage resistance and other characteristics is expected to become the next generation of power components materials. Rohm semiconductor (Shanghai) Ueda Koshi publicity planning course management department manager Co. Ltd, compared with the traditional silicon material, SiC material advantage is mainly manifested in two aspects: one is low on resistance, is about two 1/5 silicon, is also working in the high temperature environment of 250 degrees Celsius, so it can be widely used in the electric vehicle / hybrid power conversion transformer, converter circuit, PFC (power factor correction circuit), solar power and other fields. And Rom's SiC-SBD compared with other companies, in the forward voltage and the performance of the impedance and other operations to achieve a greater upgrade.

Ueda Koshi also told reporters that Rom bought SiC wafer suppliers - Germany SiCrystal company last year, early and late SiC process respectively by Rom in Japan and Thailand branch to do so, Rom established SiC devices one-stop production system. Rom SiC component technology as one of the core technologies of the next generation of semiconductor business, the future will continue to promote the SBD withstand voltage characteristics, and to strengthen the current lineup. In addition, Rom will strengthen the field of power devices, accelerate the production of MOSFET and IPM and other related products SiC.

LED products to achieve the minimum of the thin

Rome began production and sales of LED since 1973, LED has been a leader in ultra small world. The Roma show the world's smallest and thinnest patch LEDPICOLED-mini series. It through the Rom unique high brightness technology and ultra precision machining technology, the realization of the LED chip and packaging of ultra small, ultra-thin, will reduce the installation area of 70%.

In ultra small patch of LED PICOLED-mini series, Rom also shows for LED lighting 1W and 3W high power LED "SSML series" as well as for the TV backlight power LED PSML series products. Ueda Koshi introduction, 1W sample has been launched, 3W products are being developed, will soon be launched.

In addition, Rom also develop a diversified market, launched the company's first LED lighting products. This product uses three-dimensional design technology, has applied for a patent. Rom, China operating the Department of Ge Tianyi, its main advantages are three: one is the illumination of wide, lighting products are generally light diffusion angle is 140 degrees, while Rom's products can reach 220 degrees; two is more energy-efficient 6W lighting brightness and ordinary 80W fluorescent lamp is; three is longer, up to 40 thousand hours. At present, only Rom and OSRAM developed such products, the average price of about 3000 yen.

And Rom also show a single chip optical type suitable for mobile phone and digital camera, non-contact motion detection close / illuminance sensor IC BH1771GLC". Ge Tianyi also told reporters that the current situation in Japan in the forefront of 3D TV, Rom also developed a driver for the application of 3D glasses IC.