The research team published in November, the latest research found a chemical element boron (Boron) with indium gallium nitride (INGan) materials can make middle layer of semiconductor LED (middle layer) thickness, resolved luminescence efficiency decreases with the increase of the injection current phenomenon. The study has been published in Applied Physics Letters (Applied Physics Letters).
The light emitting diode (Light-emitting diode) semiconductor by N type semiconductor P type semiconductor with positively charged nature and with electronic, electric power has positive hole properties (hole) and electronic (electron) binding and yielding, in the middle layer of the material used will determine the wavelength.
The electron and hole move to the middle layer, there are too many electronic while being squeezed into the middle layer, the mutual collision, can not effectively and hole with low luminous efficiency, and this situation is called Olger combined (Auger recombination).
To solve this problem is to increase the thickness of the middle layer, so that the electron and hole there is enough space; however, to increase the thickness of the intermediate layer is not easy to imagine.
Because LED is a crystalline semiconductor, between atoms has its fixed arrangement, and the specific space also known as crystal parameters (lattice parameter). When the crystal materials are layered growth, they must have similar lattice parameters, atomic arrangement rules and material connections can match, otherwise the material will deform.
Researchers at Williams and Kioupakis through the prediction model found that adding boron to indium gallium nitride, can increase the thickness of the intermediate layer, in order to combine electron and hole. BInGaN material is the wavelength of light emitted is very close to the InGaN wavelength can be adjusted to different colors.
This study is the actual output in the laboratory is still unknown, but what to boron doped how much is a challenge, but found that the Michigan research team, research and development of new type of LED is a great contribution.
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